на замовлення 832 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 313.47 грн |
| 10+ | 209.51 грн |
| 100+ | 138.55 грн |
| 500+ | 129.37 грн |
| 1000+ | 109.46 грн |
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Технічний опис TK200F04N1L,LXGQ Toshiba
Description: MOSFET N-CH 40V 200A TO220SM, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: 175°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 200A (Ta), Rds On (Max) @ Id, Vgs: 0.9mOhm @ 100A, 10V, Power Dissipation (Max): 375W (Tc), Vgs(th) (Max) @ Id: 3V @ 1mA, Supplier Device Package: TO-220SM(W), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 214 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 14920 pF @ 10 V, Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції TK200F04N1L,LXGQ за ціною від 126.58 грн до 322.94 грн
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TK200F04N1L,LXGQ | Виробник : Toshiba Semiconductor and Storage |
 Description: MOSFET N-CH 40V 200A TO220SMPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200A (Ta) Rds On (Max) @ Id, Vgs: 0.9mOhm @ 100A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: TO-220SM(W) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 214 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 14920 pF @ 10 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 996 шт: термін постачання 21-31 дні (днів) |
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TK200F04N1L,LXGQ | Виробник : Toshiba |
Trans MOSFET N-CH Si 40V 200A Automotive AEC-Q101 3-Pin(2+Tab) TO-220SM(W) T/R |
товару немає в наявності |
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TK200F04N1L,LXGQ | Виробник : Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 40V 200A TO220SM Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200A (Ta) Rds On (Max) @ Id, Vgs: 0.9mOhm @ 100A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: TO-220SM(W) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 214 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 14920 pF @ 10 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |