TK20J50D(F) Toshiba

Description: MOSFET N-CH 500V 20A TO3P, Packaging: Tube, Package / Case: TO-3P-3, SC-65-3, Mounting Type: Through Hole, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 20A, Rds On (Max) @ Id, Vgs: 270mOhm @ 10A, 10V, Power Dissipation (Max): 280W, Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: TO-3P(N), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V.