TK22A10N1,S4X Toshiba Semiconductor and Storage
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 22A TO220SIS
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220SIS
Vgs(th) (Max) @ Id: 4V @ 300µA
Power Dissipation (Max): 30W (Tc)
Rds On (Max) @ Id, Vgs: 13.8mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
| Кількість | Ціна |
|---|---|
| 3+ | 150.32 грн |
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Технічний опис TK22A10N1,S4X Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 22A TO220SIS, Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-220SIS, Vgs(th) (Max) @ Id: 4V @ 300µA, Power Dissipation (Max): 30W (Tc), Rds On (Max) @ Id, Vgs: 13.8mOhm @ 11A, 10V, Current - Continuous Drain (Id) @ 25°C: 22A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3 Full Pack, Packaging: Tube.
Інші пропозиції TK22A10N1,S4X за ціною від 39.80 грн до 156.71 грн
| Фото | Назва | Виробник | Інформація |
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TK22A10N1,S4X | Виробник : Toshiba |
MOSFETs MOSFET NCh12.2ohm 10V 10uA VDS100V |
на замовлення 198 шт: термін постачання 21-30 дні (днів) |
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