Продукція > TOSHIBA SEMICONDUCTOR AND STORAGE > TK22A10N1,S4X

TK22A10N1,S4X Toshiba Semiconductor and Storage

Name: TK22A10N1,S4X
Brand: Toshiba Semiconductor and Storage
SKU: 4563061-3
Price: 90.54 UAH
Availability: InStock

TK22A10N1_datasheet_en_20140207.pdf?did=12792&prodName=TK22A10N1

Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 22A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 13.8mOhm @ 11A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4V @ 300µA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 50 V

на замовлення 29 шт:

термін постачання 21-31 дні (днів)

Кількість	Ціна без ПДВ
4+	90.54 грн

Мінімальне замовлення: 4

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Технічний опис TK22A10N1,S4X Toshiba Semiconductor and Storage

Description: MOSFET N-CH 100V 22A TO220SIS, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 22A (Tc), Rds On (Max) @ Id, Vgs: 13.8mOhm @ 11A, 10V, Power Dissipation (Max): 30W (Tc), Vgs(th) (Max) @ Id: 4V @ 300µA, Supplier Device Package: TO-220SIS, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 50 V.