TK290P65Y,RQ Toshiba Semiconductor and Storage

Description: MOSFET N-CH 650V 11.5A DPAK, Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 300 V, Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: DPAK, Vgs(th) (Max) @ Id: 4V @ 450µA, Power Dissipation (Max): 100W (Tc), Rds On (Max) @ Id, Vgs: 290mOhm @ 5.8A, 10V, Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).