TK2Q60D(Q) Toshiba Semiconductor and Storage

Description: MOSFET N-CH 600V 2A PW-MOLD2, Packaging: Bulk, Package / Case: TO-251-3 Stub Leads, IPak, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2A (Ta), Rds On (Max) @ Id, Vgs: 4.3Ohm @ 1A, 10V, Power Dissipation (Max): 60W (Tc), Vgs(th) (Max) @ Id: 4.4V @ 1mA, Supplier Device Package: PW-MOLD2, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 25 V.