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Технічний опис TK2R4A08QM,S4X Toshiba
Description: UMOS10 TO-220SIS 80V 2.4MOHM, Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 40 V, Gate Charge (Qg) (Max) @ Vgs: 179 nC @ 10 V, Drain to Source Voltage (Vdss): 80 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Supplier Device Package: TO-220SIS, Vgs(th) (Max) @ Id: 3.5V @ 2.2mA, Power Dissipation (Max): 47W (Tc), Rds On (Max) @ Id, Vgs: 2.44mOhm @ 50A, 10V, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 175°C, Mounting Type: Through Hole, Package / Case: TO-220-3 Full Pack, Packaging: Tube.
Інші пропозиції TK2R4A08QM,S4X за ціною від 134.59 грн до 275.56 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||
|---|---|---|---|---|---|---|---|---|---|
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TK2R4A08QM,S4X | Toshiba Semiconductor and Storage |
 Description: UMOS10 TO-220SIS 80V 2.4MOHMInput Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 40 V Gate Charge (Qg) (Max) @ Vgs: 179 nC @ 10 V Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Supplier Device Package: TO-220SIS Vgs(th) (Max) @ Id: 3.5V @ 2.2mA Power Dissipation (Max): 47W (Tc) Rds On (Max) @ Id, Vgs: 2.44mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 175°C Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Tube |
на замовлення 78 шт: термін постачання 21-31 дні (днів) |
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TK2R4A08QM,S4X | Toshiba |
Trans MOSFET N-CH Si 80V 100A 3-Pin(3+Tab) TO-220SIS Tube |
на замовлення 113 шт: термін постачання 21-31 дні (днів) |
Мінімальне замовлення: 83 шт В кошику од. на суму грн. |
| TK2R4A08QM,S4X |
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Виробник: Toshiba Semiconductor and Storage
Description: UMOS10 TO-220SIS 80V 2.4MOHM
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 179 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: TO-220SIS
Vgs(th) (Max) @ Id: 3.5V @ 2.2mA
Power Dissipation (Max): 47W (Tc)
Rds On (Max) @ Id, Vgs: 2.44mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Description: UMOS10 TO-220SIS 80V 2.4MOHM
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 179 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: TO-220SIS
Vgs(th) (Max) @ Id: 3.5V @ 2.2mA
Power Dissipation (Max): 47W (Tc)
Rds On (Max) @ Id, Vgs: 2.44mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
на замовлення 78 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 275.56 грн |
| 50+ | 134.59 грн |
| TK2R4A08QM,S4X |
|
Виробник: Toshiba
Trans MOSFET N-CH Si 80V 100A 3-Pin(3+Tab) TO-220SIS Tube
Trans MOSFET N-CH Si 80V 100A 3-Pin(3+Tab) TO-220SIS Tube
на замовлення 113 шт:
термін постачання 21-31 дні (днів)