TK31A60W,S4VX Toshiba Semiconductor and Storage
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 30.8A TO220SIS
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220SIS
Vgs(th) (Max) @ Id: 3.7V @ 1.5mA
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 88mOhm @ 15.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 30.8A (Ta)
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Технічний опис TK31A60W,S4VX Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 30.8A TO220SIS, FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3 Full Pack, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 300 V, Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-220SIS, Vgs(th) (Max) @ Id: 3.7V @ 1.5mA, Power Dissipation (Max): 45W (Tc), Rds On (Max) @ Id, Vgs: 88mOhm @ 15.4A, 10V, Current - Continuous Drain (Id) @ 25°C: 30.8A (Ta).
Інші пропозиції TK31A60W,S4VX за ціною від 234.89 грн до 584.17 грн
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TK31A60W,S4VX | Виробник : Toshiba |
MOSFETs N-Ch 30.8A 45W FET 600V 3000pF 86nC |
на замовлення 74 шт: термін постачання 21-30 дні (днів) |
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