TK31V60W,LVQ Toshiba Semiconductor and Storage
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 30.8A 4DFN
Packaging: Cut Tape (CT)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30.8A (Ta)
Rds On (Max) @ Id, Vgs: 98mOhm @ 15.4A, 10V
Power Dissipation (Max): 240W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 1.5mA
Supplier Device Package: 4-DFN-EP (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 300 V
| Кількість | Ціна |
|---|---|
| 1+ | 723.12 грн |
| 10+ | 478.83 грн |
| 100+ | 356.07 грн |
| 500+ | 308.91 грн |
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Технічний опис TK31V60W,LVQ Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 30.8A 4DFN, Mounting Type: Surface Mount, Package / Case: 4-VSFN Exposed Pad, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 300 V, Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: 4-DFN-EP (8x8), Vgs(th) (Max) @ Id: 3.7V @ 1.5mA, Power Dissipation (Max): 240W (Tc), Rds On (Max) @ Id, Vgs: 98mOhm @ 15.4A, 10V, Current - Continuous Drain (Id) @ 25°C: 30.8A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ).
Інші пропозиції TK31V60W,LVQ
| Фото | Назва | Виробник | Інформація |
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TK31V60W,LVQ | Виробник : Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 600V 30.8A 4DFN Mounting Type: Surface Mount Package / Case: 4-VSFN Exposed Pad Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 300 V Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: 4-DFN-EP (8x8) Vgs(th) (Max) @ Id: 3.7V @ 1.5mA Power Dissipation (Max): 240W (Tc) Rds On (Max) @ Id, Vgs: 98mOhm @ 15.4A, 10V Current - Continuous Drain (Id) @ 25°C: 30.8A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) |
товару немає в наявності |
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TK31V60W,LVQ | Виробник : Toshiba |
MOSFET N-Ch DTMOSIV 600 V 240W 3000pF 30.8A |
товару немає в наявності |