TK32A12N1,S4X Toshiba Semiconductor and Storage

Description: MOSFET N-CH 120V 32A TO220SIS, Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 60 V, Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V, Drain to Source Voltage (Vdss): 120 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-220SIS, Vgs(th) (Max) @ Id: 4V @ 500µA, Power Dissipation (Max): 30W (Tc), Rds On (Max) @ Id, Vgs: 13.8mOhm @ 16A, 10V, Current - Continuous Drain (Id) @ 25°C: 32A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3 Full Pack, Packaging: Tube.