Продукція > TOSHIBA SEMICONDUCTOR AND STORAGE > TK32E12N1,S1X

TK32E12N1,S1X Toshiba Semiconductor and Storage

Name: TK32E12N1,S1X
Brand: Toshiba Semiconductor and Storage
SKU: 3821030-3
Price: 420.2 UAH
Availability: InStock

TK32E12N1_datasheet_en_20140630.pdf?did=13460&prodName=TK32E12N1

Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N CH 120V 60A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 13.8mOhm @ 16A, 10V
Power Dissipation (Max): 98W (Tc)
Vgs(th) (Max) @ Id: 4V @ 500µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 60 V

на замовлення 123 шт:

термін постачання 21-31 дні (днів)

Кількість	Ціна
4+	105.05 грн
50+	81.38 грн
100+	64.50 грн

Мінімальне замовлення: 4

В кошику од. на суму грн.

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Технічний опис TK32E12N1,S1X Toshiba Semiconductor and Storage

Description: MOSFET N CH 120V 60A TO-220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 60A (Tc), Rds On (Max) @ Id, Vgs: 13.8mOhm @ 16A, 10V, Power Dissipation (Max): 98W (Tc), Vgs(th) (Max) @ Id: 4V @ 500µA, Supplier Device Package: TO-220, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 120 V, Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 60 V.