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Технічний опис TK33S10N1L Toshiba
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 100V; 33A; 125W; DPAK, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 100V, Drain current: 33A, Power dissipation: 125W, Case: DPAK, Gate-source voltage: ±20V, On-state resistance: 16.2mΩ, Mounting: SMD, Gate charge: 33nC, Kind of package: reel; tape, Kind of channel: enhancement.
Інші пропозиції TK33S10N1L
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
 |
TK33S10N1L,LQ(O | TOSHIBA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 33A; 125W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 33A Power dissipation: 125W Case: DPAK Gate-source voltage: ±20V On-state resistance: 16.2mΩ Mounting: SMD Gate charge: 33nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. |
| TK33S10N1L,LQ(O |
Виробник: TOSHIBA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 33A; 125W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 33A
Power dissipation: 125W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 16.2mΩ
Mounting: SMD
Gate charge: 33nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 33A; 125W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 33A
Power dissipation: 125W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 16.2mΩ
Mounting: SMD
Gate charge: 33nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.