TK34E10N1,S1X(S TOSHIBA
Виробник: TOSHIBA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 75A; 103W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 75A
Power dissipation: 103W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 9.5mΩ
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 72.02 грн |
| 8+ | 59.26 грн |
| 10+ | 52.48 грн |
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Технічний опис TK34E10N1,S1X(S TOSHIBA
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 100V; 75A; 103W; TO220-3, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 100V, Drain current: 75A, Power dissipation: 103W, Case: TO220-3, Gate-source voltage: ±20V, On-state resistance: 9.5mΩ, Mounting: THT, Gate charge: 38nC, Kind of package: tube, Kind of channel: enhancement.