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Технічний опис TK35N65W,S1F Toshiba
Description: MOSFET N-CH 650V 35A TO247, Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 300 V, Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-247, Vgs(th) (Max) @ Id: 3.5V @ 2.1mA, Power Dissipation (Max): 270W (Tc), Rds On (Max) @ Id, Vgs: 80mOhm @ 17.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 35A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.
Інші пропозиції TK35N65W,S1F
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
TK35N65W,S1F | Виробник : Toshiba Semiconductor and Storage |
 Description: MOSFET N-CH 650V 35A TO247Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 300 V Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-247 Vgs(th) (Max) @ Id: 3.5V @ 2.1mA Power Dissipation (Max): 270W (Tc) Rds On (Max) @ Id, Vgs: 80mOhm @ 17.5A, 10V Current - Continuous Drain (Id) @ 25°C: 35A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
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