TK35S04K3L(T6L1,NQ Toshiba Semiconductor and Storage
Виробник: Toshiba Semiconductor and StorageDescription: MOSFET N-CH 40V 35A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta)
Rds On (Max) @ Id, Vgs: 10.3mOhm @ 17.5A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 10 V
на замовлення 1650 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 143.69 грн |
| 10+ | 87.99 грн |
| 100+ | 59.36 грн |
| 500+ | 44.20 грн |
| 1000+ | 40.50 грн |
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Технічний опис TK35S04K3L(T6L1,NQ Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 35A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 35A (Ta), Rds On (Max) @ Id, Vgs: 10.3mOhm @ 17.5A, 10V, Power Dissipation (Max): 58W (Tc), Vgs(th) (Max) @ Id: 3V @ 1mA, Supplier Device Package: DPAK+, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 10 V.
Інші пропозиції TK35S04K3L(T6L1,NQ
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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TK35S04K3L(T6L1,NQ | Виробник : Toshiba |
Trans MOSFET N-CH Si 40V 35A Automotive 3-Pin(2+Tab) DPAK+ T/R |
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TK35S04K3L(T6L1,NQ | Виробник : Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 40V 35A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Ta) Rds On (Max) @ Id, Vgs: 10.3mOhm @ 17.5A, 10V Power Dissipation (Max): 58W (Tc) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: DPAK+ Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 10 V |
товару немає в наявності |
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TK35S04K3L(T6L1,NQ | Виробник : Toshiba |
MOSFET N-Ch MOS 35A 40V 58W 1370pF 0.0103 |
товару немає в наявності |