TK39A60W,S4VX Toshiba Semiconductor and Storage
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 38.8A TO220SIS
Supplier Device Package: TO-220SIS
Vgs(th) (Max) @ Id: 3.7V @ 1.9mA
Power Dissipation (Max): 50W (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 19.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 38.8A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
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Технічний опис TK39A60W,S4VX Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 38.8A TO220SIS, Supplier Device Package: TO-220SIS, Vgs(th) (Max) @ Id: 3.7V @ 1.9mA, Power Dissipation (Max): 50W (Tc), Rds On (Max) @ Id, Vgs: 65mOhm @ 19.4A, 10V, Current - Continuous Drain (Id) @ 25°C: 38.8A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3 Full Pack, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 300 V, Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V.
Інші пропозиції TK39A60W,S4VX за ціною від 338.97 грн до 745.80 грн
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TK39A60W,S4VX | Виробник : Toshiba |
MOSFETs N-Ch DTMOSIV 600 V 50W 4100pF 38.8A |
на замовлення 95 шт: термін постачання 21-30 дні (днів) |
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