TK3R1E04PL,S1X Toshiba Semiconductor and Storage

Description: MOSFET N-CH 40V 100A TO220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 3.8mOhm @ 30A, 4.5V, Power Dissipation (Max): 87W (Tc), Vgs(th) (Max) @ Id: 2.4V @ 500µA, Supplier Device Package: TO-220, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 63.4 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4670 pF @ 20 V.