TK40E10K3,S1X(S Toshiba

Description: MOSFET N-CH 100V 40A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 40A (Ta), Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V, Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: TO-220-3, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 10 V.