TK40E10K3,S1X(S Toshiba Semiconductor and Storage
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 40A TO220-3
Vgs(th) (Max) @ Id: 4V @ 1mA
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Supplier Device Package: TO-220-3
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Технічний опис TK40E10K3,S1X(S Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 40A TO220-3, Vgs(th) (Max) @ Id: 4V @ 1mA, Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 40A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Supplier Device Package: TO-220-3.
Інші пропозиції TK40E10K3,S1X(S
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
TK40E10K3,S1X(S | Виробник : Toshiba |
MOSFET N-Ch MOS 40A 100V 147W 4000pF 0.015 |
товару немає в наявності |