Технічний опис TK40E10K3,S1X(S Toshiba
Description: MOSFET N-CH 100V 40A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 40A (Ta), Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V, Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: TO-220-3, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 10 V.
Інші пропозиції TK40E10K3,S1X(S
| Фото | Назва | Виробник | Інформація |
Доступність |
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TK40E10K3,S1X(S | Виробник : Toshiba Semiconductor and Storage |
 Description: MOSFET N-CH 100V 40A TO220-3Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Ta) Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-220-3 Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 10 V |
товару немає в наявності |
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TK40E10K3,S1X(S | Виробник : Toshiba |
MOSFET N-Ch MOS 40A 100V 147W 4000pF 0.015 |
товару немає в наявності |