TK40P03M1(T6RDS-Q) Toshiba Semiconductor and Storage
Виробник: Toshiba Semiconductor and StorageDescription: MOSFET N-CH 30V 40A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 10.8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.3V @ 100µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 10 V
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Технічний опис TK40P03M1(T6RDS-Q) Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 40A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 40A (Ta), Rds On (Max) @ Id, Vgs: 10.8mOhm @ 20A, 10V, Vgs(th) (Max) @ Id: 2.3V @ 100µA, Supplier Device Package: DPAK, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 17.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 10 V.
Інші пропозиції TK40P03M1(T6RDS-Q)
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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TK40P03M1(T6RDS-Q) | Виробник : Toshiba |
MOSFET N-Ch MOS 20A 40V 25W 410pF 0.074 |
товару немає в наявності |