Технічний опис TK40P04M1(T6RSS-Q) Toshiba
Description: MOSFET N-CH 40V 40A DP, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 40A (Ta), Rds On (Max) @ Id, Vgs: 11mOhm @ 20A, 10V, Power Dissipation (Max): 47W (Tc), Vgs(th) (Max) @ Id: 2.3V @ 200µA, Supplier Device Package: DPAK, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1920 pF @ 10 V.
Інші пропозиції TK40P04M1(T6RSS-Q)
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TK40P04M1(T6RSS-Q) | Виробник : Toshiba Semiconductor and Storage |
 Description: MOSFET N-CH 40V 40A DPPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Ta) Rds On (Max) @ Id, Vgs: 11mOhm @ 20A, 10V Power Dissipation (Max): 47W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 200µA Supplier Device Package: DPAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1920 pF @ 10 V |
товару немає в наявності |
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TK40P04M1(T6RSS-Q) | Виробник : Toshiba |
MOSFET 40V N0Ch PWR FET 40A 47W 1920pF |
товару немає в наявності |