TK40S06N1L,LXHQ Toshiba Semiconductor and Storage
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 40A DPAK
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: DPAK+
Vgs(th) (Max) @ Id: 2.5V @ 200µA
Power Dissipation (Max): 88.2W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Qualification: AEC-Q101
Grade: Automotive
Rds On (Max) @ Id, Vgs: 18mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
| Кількість | Ціна без ПДВ |
|---|---|
| 2000+ | 29.28 грн |
| 4000+ | 26.12 грн |
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Технічний опис TK40S06N1L,LXHQ Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 40A DPAK, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: DPAK+, Vgs(th) (Max) @ Id: 2.5V @ 200µA, Power Dissipation (Max): 88.2W (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V, Qualification: AEC-Q101, Grade: Automotive, Rds On (Max) @ Id, Vgs: 18mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 40A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 175°C, Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).
Інші пропозиції TK40S06N1L,LXHQ за ціною від 29.67 грн до 83.90 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||
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TK40S06N1L,LXHQ | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 60V 40A DPAK Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: DPAK+ Vgs(th) (Max) @ Id: 2.5V @ 200µA Power Dissipation (Max): 88.2W (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 40A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 175°C Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) |
на замовлення 6736 шт: термін постачання 21-31 дні (днів) |
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TK40S06N1L,LXHQ | Toshiba |
MOSFETs 2W 1MHz Automotive; AEC-Q101 |
на замовлення 4265 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. |
| TK40S06N1L,LXHQ |
|
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 40A DPAK
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: DPAK+
Vgs(th) (Max) @ Id: 2.5V @ 200µA
Power Dissipation (Max): 88.2W (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 60V 40A DPAK
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: DPAK+
Vgs(th) (Max) @ Id: 2.5V @ 200µA
Power Dissipation (Max): 88.2W (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
на замовлення 6736 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 83.90 грн |
| 10+ | 55.89 грн |
| 100+ | 43.50 грн |
| 500+ | 32.51 грн |
| 1000+ | 29.67 грн |
| TK40S06N1L,LXHQ |
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Виробник: Toshiba
MOSFETs 2W 1MHz Automotive; AEC-Q101
MOSFETs 2W 1MHz Automotive; AEC-Q101
на замовлення 4265 шт:
термін постачання 21-30 дні (днів)