TK42A12N1,S4X Toshiba Semiconductor and Storage
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 120V 42A TO220SIS
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 60 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Drain to Source Voltage (Vdss): 120 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220SIS
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 35W (Tc)
Rds On (Max) @ Id, Vgs: 9.4mOhm @ 21A, 10V
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
| Кількість | Ціна |
|---|---|
| 3+ | 140.83 грн |
| 50+ | 75.30 грн |
| 100+ | 67.61 грн |
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Технічний опис TK42A12N1,S4X Toshiba Semiconductor and Storage
Description: MOSFET N-CH 120V 42A TO220SIS, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 60 V, Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V, Drain to Source Voltage (Vdss): 120 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-220SIS, Vgs(th) (Max) @ Id: 4V @ 1mA, Power Dissipation (Max): 35W (Tc), Rds On (Max) @ Id, Vgs: 9.4mOhm @ 21A, 10V, Current - Continuous Drain (Id) @ 25°C: 42A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3 Full Pack.
Інші пропозиції TK42A12N1,S4X за ціною від 44.09 грн до 146.86 грн
| Фото | Назва | Виробник | Інформація |
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TK42A12N1,S4X | Виробник : Toshiba |
MOSFETs MOSFET NCh7.8ohm VGS10V10uAVDS120V |
на замовлення 8 шт: термін постачання 21-30 дні (днів) |
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