TK430A60F,S4X(S TOSHIBA
Виробник: TOSHIBA
Description: TOSHIBA - TK430A60F,S4X(S - Leistungs-MOSFET, n-Kanal, 600 V, 13 A, 0.36 ohm, TO-220SIS, Durchsteckmontage
tariffCode: 85412900
Transistormontage: Durchsteckmontage
euEccn: NLR
Drain-Source-Spannung Vds: 600V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 13A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Gate-Source-Schwellenspannung, max.: 4V
Verlustleistung: 45W
SVHC: To Be Advised
Bauform - Transistor: TO-220SIS
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 0.36ohm
| Кількість | Ціна |
|---|---|
| 3+ | 301.11 грн |
| 10+ | 185.43 грн |
| 100+ | 133.74 грн |
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Технічний опис TK430A60F,S4X(S TOSHIBA
Description: TOSHIBA - TK430A60F,S4X(S - Leistungs-MOSFET, n-Kanal, 600 V, 13 A, 0.36 ohm, TO-220SIS, Durchsteckmontage, tariffCode: 85412900, Transistormontage: Durchsteckmontage, euEccn: NLR, Drain-Source-Spannung Vds: 600V, rohsCompliant: Y-EX, Dauer-Drainstrom Id: 13A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, isCanonical: Y, Gate-Source-Schwellenspannung, max.: 4V, Verlustleistung: 45W, SVHC: To Be Advised, Bauform - Transistor: TO-220SIS, Anzahl der Pins: 3Pin(s), Produktpalette: -, productTraceability: Yes-Date/Lot Code, usEccn: EAR99, Kanaltyp: n-Kanal, Betriebstemperatur, max.: 150°C, Rds(on)-Prüfspannung: 10V, Drain-Source-Durchgangswiderstand: 0.36ohm.
Інші пропозиції TK430A60F,S4X(S
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
TK430A60F,S4X(S | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH Input Capacitance (Ciss) (Max) @ Vds: 1940 pF @ 300 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-220SIS Vgs(th) (Max) @ Id: 4V @ 1.75mA Power Dissipation (Max): 45W (Tc) Rds On (Max) @ Id, Vgs: 430mOhm @ 6.5A, 10V Current - Continuous Drain (Id) @ 25°C: 13A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. |
| TK430A60F,S4X(S |
|
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH
Input Capacitance (Ciss) (Max) @ Vds: 1940 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220SIS
Vgs(th) (Max) @ Id: 4V @ 1.75mA
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 430mOhm @ 6.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
Description: MOSFET N-CH
Input Capacitance (Ciss) (Max) @ Vds: 1940 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220SIS
Vgs(th) (Max) @ Id: 4V @ 1.75mA
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 430mOhm @ 6.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
товару немає в наявності
В кошику
од. на суму грн.