TK49N65W,S1F Toshiba Semiconductor and Storage
Виробник: Toshiba Semiconductor and Storage
Description: PB-F POWER MOSFET TRANSISTOR TO2
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247
Vgs(th) (Max) @ Id: 3.5V @ 2.5mA
Power Dissipation (Max): 400W (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 24.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 49.2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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Технічний опис TK49N65W,S1F Toshiba Semiconductor and Storage
Description: PB-F POWER MOSFET TRANSISTOR TO2, Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 300 V, Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-247, Vgs(th) (Max) @ Id: 3.5V @ 2.5mA, Power Dissipation (Max): 400W (Tc), Rds On (Max) @ Id, Vgs: 55mOhm @ 24.6A, 10V, Current - Continuous Drain (Id) @ 25°C: 49.2A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C, Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.
Інші пропозиції TK49N65W,S1F за ціною від 623.54 грн до 1030.50 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна | ||||||
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TK49N65W,S1F | Виробник : Toshiba |
MOSFETs N-Ch Power MOSFET Transistor |
на замовлення 57 шт: термін постачання 21-30 дні (днів) |
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