TK50P04M1(T6RSS-Q) Toshiba Semiconductor and Storage

Description: MOSFET N-CH 40V 50A DP, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 50A (Ta), Rds On (Max) @ Id, Vgs: 8.7mOhm @ 25A, 10V, Power Dissipation (Max): 60W (Tc), Vgs(th) (Max) @ Id: 2.3V @ 500µA, Supplier Device Package: D-Pak, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 10 V.