TK55S10N1,LQ Toshiba Semiconductor and Storage
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 55A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Ta)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 27.5A, 10V
Power Dissipation (Max): 157W (Tc)
Vgs(th) (Max) @ Id: 4V @ 500µA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3280 pF @ 10 V
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Технічний опис TK55S10N1,LQ Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 55A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 55A (Ta), Rds On (Max) @ Id, Vgs: 6.5mOhm @ 27.5A, 10V, Power Dissipation (Max): 157W (Tc), Vgs(th) (Max) @ Id: 4V @ 500µA, Supplier Device Package: DPAK+, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3280 pF @ 10 V.
Інші пропозиції TK55S10N1,LQ за ціною від 78.70 грн до 250.93 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||
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TK55S10N1,LQ | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 100V 55A DPAK Current - Continuous Drain (Id) @ 25°C: 55A (Ta) FET Type: N-Channel Input Capacitance (Ciss) (Max) @ Vds: 3280 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: DPAK+ Vgs(th) (Max) @ Id: 4V @ 500µA Technology: MOSFET (Metal Oxide) Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) Power Dissipation (Max): 157W (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 27.5A, 10V |
на замовлення 3920 шт: термін постачання 21-31 дні (днів) |
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TK55S10N1,LQ | Toshiba |
MOSFETs UMOSVIII 100V 6.5m max(VGS=10V) DPAK |
на замовлення 2105 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. |
| TK55S10N1,LQ |
|
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 55A DPAK
Current - Continuous Drain (Id) @ 25°C: 55A (Ta)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 3280 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: DPAK+
Vgs(th) (Max) @ Id: 4V @ 500µA
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Power Dissipation (Max): 157W (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 27.5A, 10V
Description: MOSFET N-CH 100V 55A DPAK
Current - Continuous Drain (Id) @ 25°C: 55A (Ta)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 3280 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: DPAK+
Vgs(th) (Max) @ Id: 4V @ 500µA
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Power Dissipation (Max): 157W (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 27.5A, 10V
на замовлення 3920 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 250.93 грн |
| 10+ | 158.40 грн |
| 100+ | 110.77 грн |
| 500+ | 84.84 грн |
| 1000+ | 78.70 грн |
| TK55S10N1,LQ |
|
Виробник: Toshiba
MOSFETs UMOSVIII 100V 6.5m max(VGS=10V) DPAK
MOSFETs UMOSVIII 100V 6.5m max(VGS=10V) DPAK
на замовлення 2105 шт:
термін постачання 21-30 дні (днів)