TK560A65Y,S4X Toshiba Semiconductor and Storage
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 650V 7A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 560mOhm @ 3.5A, 10V
Power Dissipation (Max): 30W
Vgs(th) (Max) @ Id: 4V @ 240µA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 300 V
| Кількість | Ціна |
|---|---|
| 3+ | 157.44 грн |
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Технічний опис TK560A65Y,S4X Toshiba Semiconductor and Storage
Description: MOSFET N-CH 650V 7A TO220SIS, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7A (Tc), Rds On (Max) @ Id, Vgs: 560mOhm @ 3.5A, 10V, Power Dissipation (Max): 30W, Vgs(th) (Max) @ Id: 4V @ 240µA, Supplier Device Package: TO-220SIS, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 300 V.
Інші пропозиції TK560A65Y,S4X за ціною від 49.44 грн до 190.35 грн
| Фото | Назва | Виробник | Інформація |
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Ціна | ||||||||||||
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TK560A65Y,S4X | Виробник : Toshiba |
MOSFETs N-Ch DTMOSV 650V 30W 380pF 7.0A |
на замовлення 199 шт: термін постачання 21-30 дні (днів) |
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