TK58A06N1,S4X Toshiba Semiconductor and Storage

Description: MOSFET N-CH 60V 58A TO220SIS, Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 30 V, Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-220SIS, Vgs(th) (Max) @ Id: 4V @ 500µA, Power Dissipation (Max): 35W (Tc), Rds On (Max) @ Id, Vgs: 5.4mOhm @ 29A, 10V, Current - Continuous Drain (Id) @ 25°C: 58A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3 Full Pack, Packaging: Tube.