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Технічний опис TK58E06N1,S1X Toshiba
Description: MOSFET N-CH 60V 58A TO220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 58A (Ta), Rds On (Max) @ Id, Vgs: 5.4mOhm @ 29A, 10V, Power Dissipation (Max): 110W (Tc), Vgs(th) (Max) @ Id: 4V @ 500µA, Supplier Device Package: TO-220, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 30 V.
Інші пропозиції TK58E06N1,S1X
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
 |
TK58E06N1,S1X | Toshiba Semiconductor and Storage |
 Description: MOSFET N-CH 60V 58A TO220Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 58A (Ta) Rds On (Max) @ Id, Vgs: 5.4mOhm @ 29A, 10V Power Dissipation (Max): 110W (Tc) Vgs(th) (Max) @ Id: 4V @ 500µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 30 V |
товару немає в наявності |
В кошику од. на суму грн. |
 |
TK58E06N1,S1X | TOSHIBA |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 58A; 110W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 58A Power dissipation: 110W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 4.4mΩ Mounting: THT Gate charge: 46nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. |
 |
TK58E06N1,S1X | Toshiba |
Trans MOSFET N-CH Si 60V 105A 3-Pin(3+Tab) TO-220 Magazine |
товару немає в наявності |
Мінімальне замовлення: 50 шт В кошику од. на суму грн. |
|
|
TK58E06N1,S1X | Toshiba |
Trans MOSFET N-CH Si 60V 105A 3-Pin(3+Tab) TO-220 Magazine |
товару немає в наявності |
Мінімальне замовлення: 50 шт В кошику од. на суму грн. |
| TK58E06N1,S1X |
|
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 58A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Ta)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 29A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 500µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 30 V
Description: MOSFET N-CH 60V 58A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Ta)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 29A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 500µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 30 V
товару немає в наявності
В кошику
од. на суму грн.
| TK58E06N1,S1X |
|
Виробник: TOSHIBA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 58A; 110W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 58A
Power dissipation: 110W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.4mΩ
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 58A; 110W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 58A
Power dissipation: 110W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.4mΩ
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| TK58E06N1,S1X |
|
Виробник: Toshiba
Trans MOSFET N-CH Si 60V 105A 3-Pin(3+Tab) TO-220 Magazine
Trans MOSFET N-CH Si 60V 105A 3-Pin(3+Tab) TO-220 Magazine
товару немає в наявності
Мінімальне замовлення: 50 шт
В кошику
од. на суму грн.
| TK58E06N1,S1X |
|
Виробник: Toshiba
Trans MOSFET N-CH Si 60V 105A 3-Pin(3+Tab) TO-220 Magazine
Trans MOSFET N-CH Si 60V 105A 3-Pin(3+Tab) TO-220 Magazine
товару немає в наявності
Мінімальне замовлення: 50 шт
В кошику
од. на суму грн.