Продукція > TOSHIBA SEMICONDUCTOR AND STORAGE > TK5A60D(STA4,Q,M)

TK5A60D(STA4,Q,M) Toshiba Semiconductor and Storage

Name: TK5A60D(STA4,Q,M)
Brand: Toshiba Semiconductor and Storage
SKU: 2768885-3
Price: 76.9 UAH
Availability: InStock

Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 5A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 1.43Ohm @ 2.5A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 1mA
Supplier Device Package: TO-220SIS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V

на замовлення 50 шт:

термін постачання 21-31 дні (днів)

Кількість	Ціна без ПДВ
3+	99.66 грн
50+	76.9 грн

Мінімальне замовлення: 3

Відгуки про товар

Написати відгук

Технічний опис TK5A60D(STA4,Q,M) Toshiba Semiconductor and Storage

Description: MOSFET N-CH 600V 5A TO220SIS, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5A (Ta), Rds On (Max) @ Id, Vgs: 1.43Ohm @ 2.5A, 10V, Power Dissipation (Max): 35W (Tc), Vgs(th) (Max) @ Id: 4.4V @ 1mA, Supplier Device Package: TO-220SIS, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V.