TK5P60W,RVQ Toshiba Semiconductor and Storage
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N CH 600V 5.4A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 3.7V @ 270µA
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 2.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
| Кількість | Ціна |
|---|---|
| 2000+ | 55.42 грн |
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Технічний опис TK5P60W,RVQ Toshiba Semiconductor and Storage
Description: MOSFET N CH 600V 5.4A DPAK, Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 300 V, Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: DPAK, Vgs(th) (Max) @ Id: 3.7V @ 270µA, Power Dissipation (Max): 60W (Tc), Rds On (Max) @ Id, Vgs: 900mOhm @ 2.7A, 10V, Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).
Інші пропозиції TK5P60W,RVQ за ціною від 54.98 грн до 194.45 грн
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TK5P60W,RVQ | Виробник : Toshiba Semiconductor and Storage |
Description: MOSFET N CH 600V 5.4A DPAK Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 300 V Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: DPAK Vgs(th) (Max) @ Id: 3.7V @ 270µA Power Dissipation (Max): 60W (Tc) Rds On (Max) @ Id, Vgs: 900mOhm @ 2.7A, 10V Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) |
на замовлення 7975 шт: термін постачання 21-31 дні (днів) |
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TK5P60W,RVQ | Виробник : Toshiba |
MOSFETs DTMOSIV 600V 900mOhm 5.4A 60W 600V 380pF |
на замовлення 1765 шт: термін постачання 21-30 дні (днів) |
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