TK60S10N1L,LXHQ Toshiba Semiconductor and Storage
Виробник: Toshiba Semiconductor and StorageDescription: MOSFET N-CH 100V 60A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
Rds On (Max) @ Id, Vgs: 6.11mOhm @ 30A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 500µA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4320 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2000+ | 46.84 грн |
| 4000+ | 43.33 грн |
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Технічний опис TK60S10N1L,LXHQ Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 60A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: 175°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 60A (Ta), Rds On (Max) @ Id, Vgs: 6.11mOhm @ 30A, 10V, Power Dissipation (Max): 180W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 500µA, Supplier Device Package: DPAK+, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4320 pF @ 10 V, Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції TK60S10N1L,LXHQ за ціною від 43.71 грн до 132.49 грн
| Фото | Назва | Виробник | Інформація |
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TK60S10N1L,LXHQ | Виробник : Toshiba |
MOSFETs PD=180W F=1MHZ AEC-Q101 |
на замовлення 6529 шт: термін постачання 21-30 дні (днів) |
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TK60S10N1L,LXHQ | Виробник : Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 100V 60A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Ta) Rds On (Max) @ Id, Vgs: 6.11mOhm @ 30A, 10V Power Dissipation (Max): 180W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 500µA Supplier Device Package: DPAK+ Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4320 pF @ 10 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 7619 шт: термін постачання 21-31 дні (днів) |
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