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Технічний опис TK62J60W,S1VQ(O Toshiba
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 600V; 61.8A; 400W; TO3PN, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 600V, Drain current: 61.8A, Power dissipation: 400W, Case: TO3PN, Gate-source voltage: ±30V, On-state resistance: 40mΩ, Mounting: THT, Gate charge: 180nC, Kind of package: tube, Kind of channel: enhancement.
Інші пропозиції TK62J60W,S1VQ(O
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
 |
TK62J60W,S1VQ(O | TOSHIBA |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 61.8A; 400W; TO3PN Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 61.8A Power dissipation: 400W Case: TO3PN Gate-source voltage: ±30V On-state resistance: 40mΩ Mounting: THT Gate charge: 180nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. |
| TK62J60W,S1VQ(O |
|
Виробник: TOSHIBA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 61.8A; 400W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 61.8A
Power dissipation: 400W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 40mΩ
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 61.8A; 400W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 61.8A
Power dissipation: 400W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 40mΩ
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.