TK62N60W,S1VF Toshiba Semiconductor and Storage
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 61.8A TO247
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247
Vgs(th) (Max) @ Id: 3.7V @ 3.1mA
Power Dissipation (Max): 400W (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 30.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 61.8A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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Технічний опис TK62N60W,S1VF Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 61.8A TO247, Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 300 V, Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-247, Vgs(th) (Max) @ Id: 3.7V @ 3.1mA, Power Dissipation (Max): 400W (Tc), Rds On (Max) @ Id, Vgs: 40mOhm @ 30.9A, 10V, Current - Continuous Drain (Id) @ 25°C: 61.8A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.
Інші пропозиції TK62N60W,S1VF за ціною від 727.87 грн до 1393.97 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна | ||||||||
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TK62N60W,S1VF | Виробник : Toshiba |
MOSFETs DTMOSIV 600V 40mOhm 61.8A 400W 6500pF |
на замовлення 30 шт: термін постачання 21-30 дні (днів) |
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