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Технічний опис TK65S04N1L,LQ(O Toshiba
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 40V; 65A; 107W; DPAK; ESD, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 40V, Drain current: 65A, Power dissipation: 107W, Case: DPAK, Gate-source voltage: ±20V, On-state resistance: 7.8mΩ, Mounting: SMD, Gate charge: 39nC, Kind of package: reel; tape, Kind of channel: enhancement, Version: ESD.
Інші пропозиції TK65S04N1L,LQ(O
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
TK65S04N1L,LQ(O | TOSHIBA |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 65A; 107W; DPAK; ESD Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 65A Power dissipation: 107W Case: DPAK Gate-source voltage: ±20V On-state resistance: 7.8mΩ Mounting: SMD Gate charge: 39nC Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
товару немає в наявності |
В кошику од. на суму грн. |
| TK65S04N1L,LQ(O |
|
Виробник: TOSHIBA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 65A; 107W; DPAK; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 65A
Power dissipation: 107W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 7.8mΩ
Mounting: SMD
Gate charge: 39nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 65A; 107W; DPAK; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 65A
Power dissipation: 107W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 7.8mΩ
Mounting: SMD
Gate charge: 39nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
товару немає в наявності
В кошику
од. на суму грн.