TK6A80E,S4X(S TOSHIBA
Виробник: TOSHIBA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 6A; Idm: 18A; 45W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 6A
Pulsed drain current: 18A
Power dissipation: 45W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.35Ω
Mounting: THT
Gate charge: 32nC
Kind of package: tube
Kind of channel: enhancement
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 114.55 грн |
| 5+ | 95.56 грн |
| 10+ | 84.76 грн |
| 50+ | 78.11 грн |
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Технічний опис TK6A80E,S4X(S TOSHIBA
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 800V; 6A; Idm: 18A; 45W; TO220FP, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 800V, Drain current: 6A, Pulsed drain current: 18A, Power dissipation: 45W, Case: TO220FP, Gate-source voltage: ±30V, On-state resistance: 1.35Ω, Mounting: THT, Gate charge: 32nC, Kind of package: tube, Kind of channel: enhancement.