TK6P53D(T6RSS-Q) Toshiba Semiconductor and Storage
Виробник: Toshiba Semiconductor and StorageDescription: MOSFET N-CH 525V 6A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 3A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 1mA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 525 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V
на замовлення 1988 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 141.31 грн |
| 10+ | 86.69 грн |
| 100+ | 58.51 грн |
| 500+ | 43.58 грн |
| 1000+ | 39.94 грн |
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Технічний опис TK6P53D(T6RSS-Q) Toshiba Semiconductor and Storage
Description: MOSFET N-CH 525V 6A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6A (Ta), Rds On (Max) @ Id, Vgs: 1.3Ohm @ 3A, 10V, Power Dissipation (Max): 100W (Tc), Vgs(th) (Max) @ Id: 4.4V @ 1mA, Supplier Device Package: DPAK, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 525 V, Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V.
Інші пропозиції TK6P53D(T6RSS-Q)
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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TK6P53D(T6RSS-Q) | Виробник : Toshiba |
Trans MOSFET N-CH Si 525V 6A 3-Pin(2+Tab) DPAK T/R |
товару немає в наявності |
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TK6P53D(T6RSS-Q) | Виробник : Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 525V 6A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Rds On (Max) @ Id, Vgs: 1.3Ohm @ 3A, 10V Power Dissipation (Max): 100W (Tc) Vgs(th) (Max) @ Id: 4.4V @ 1mA Supplier Device Package: DPAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 525 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V |
товару немає в наявності |
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TK6P53D(T6RSS-Q) | Виробник : Toshiba |
MOSFETs N-Ch MOS 6A 525V 100W 600pF 1.3 Ohm |
товару немає в наявності |