TK6P65W,RQ Toshiba Semiconductor and Storage

Description: MOSFET N-CH 650V 5.8A DPAK, Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 300 V, Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: DPAK, Vgs(th) (Max) @ Id: 3.5V @ 180µA, Power Dissipation (Max): 60W (Tc), Rds On (Max) @ Id, Vgs: 1.05Ohm @ 2.9A, 10V, Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).