TK7J90E,S1E Toshiba Semiconductor and Storage

Description: MOSFET N-CH 900V 7A TO3P, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V, Drain to Source Voltage (Vdss): 900 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-3P(N), Vgs(th) (Max) @ Id: 4V @ 700µA, Power Dissipation (Max): 200W (Tc), Rds On (Max) @ Id, Vgs: 2Ohm @ 3.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 7A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-3P-3, SC-65-3.