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Технічний опис TK7J90E Toshiba
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 900V; 7A; Idm: 21A; 200W; TO3PN, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 900V, Drain current: 7A, Pulsed drain current: 21A, Power dissipation: 200W, Case: TO3PN, Gate-source voltage: ±30V, On-state resistance: 2Ω, Mounting: THT, Gate charge: 32nC, Kind of package: tube, Kind of channel: enhancement.
Інші пропозиції TK7J90E
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
| TK7J90E,S1E(S | TOSHIBA |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 900V; 7A; Idm: 21A; 200W; TO3PN Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 900V Drain current: 7A Pulsed drain current: 21A Power dissipation: 200W Case: TO3PN Gate-source voltage: ±30V On-state resistance: 2Ω Mounting: THT Gate charge: 32nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. |
| TK7J90E,S1E(S |
|
Виробник: TOSHIBA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 7A; Idm: 21A; 200W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 7A
Pulsed drain current: 21A
Power dissipation: 200W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 2Ω
Mounting: THT
Gate charge: 32nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 7A; Idm: 21A; 200W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 7A
Pulsed drain current: 21A
Power dissipation: 200W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 2Ω
Mounting: THT
Gate charge: 32nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.