TK7R7P10PL,RQ Toshiba Semiconductor and Storage
Виробник: Toshiba Semiconductor and Storage
Description: X35 PB-F POWER MOSFET TRANSISTOR
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 2.5V @ 500µA
Power Dissipation (Max): 93W (Tc)
Rds On (Max) @ Id, Vgs: 7.7mOhm @ 27.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
| Кількість | Ціна |
|---|---|
| 2500+ | 34.65 грн |
| 5000+ | 31.50 грн |
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Технічний опис TK7R7P10PL,RQ Toshiba Semiconductor and Storage
Description: X35 PB-F POWER MOSFET TRANSISTOR, Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: DPAK, Vgs(th) (Max) @ Id: 2.5V @ 500µA, Power Dissipation (Max): 93W (Tc), Rds On (Max) @ Id, Vgs: 7.7mOhm @ 27.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 55A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 175°C, Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).
Інші пропозиції TK7R7P10PL,RQ за ціною від 30.38 грн до 137.84 грн
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TK7R7P10PL,RQ | Виробник : Toshiba Semiconductor and Storage |
Description: X35 PB-F POWER MOSFET TRANSISTOR Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: DPAK Vgs(th) (Max) @ Id: 2.5V @ 500µA Power Dissipation (Max): 93W (Tc) Rds On (Max) @ Id, Vgs: 7.7mOhm @ 27.5A, 10V Current - Continuous Drain (Id) @ 25°C: 55A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 175°C Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) |
на замовлення 18845 шт: термін постачання 21-31 дні (днів) |
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TK7R7P10PL,RQ | Виробник : Toshiba |
MOSFETs Pb-F POWER MOSFET TRANSISTOR DPAK PD=93W F=1MHZ |
на замовлення 3831 шт: термін постачання 21-30 дні (днів) |
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