TK8A25DA,S4X Toshiba Semiconductor and Storage

Description: PB-F POWER MOSFET TRANSISTOR TO-, Power Dissipation (Max): 30W (Tc), Rds On (Max) @ Id, Vgs: 500mOhm @ 3.8A, 10V, Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C, Mounting Type: Through Hole, Package / Case: TO-220-3 Full Pack, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V, Drain to Source Voltage (Vdss): 250 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-220SIS, Vgs(th) (Max) @ Id: 3.5V @ 1mA.