TK8A60W5,S5VX Toshiba

Description: MOSFET N-CH 600V 8A TO220SIS, Rds On (Max) @ Id, Vgs: 540mOhm @ 4A, 10V, Current - Continuous Drain (Id) @ 25°C: 8A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3 Full Pack, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 300 V, Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-220SIS, Vgs(th) (Max) @ Id: 4.5V @ 400µA, Power Dissipation (Max): 30W (Tc).