TK8P60W5,RVQ Toshiba Semiconductor and Storage
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 8A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 560mOhm @ 4A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 400µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 300 V
| Кількість | Ціна |
|---|---|
| 2000+ | 56.38 грн |
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Технічний опис TK8P60W5,RVQ Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 8A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8A (Ta), Rds On (Max) @ Id, Vgs: 560mOhm @ 4A, 10V, Power Dissipation (Max): 80W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 400µA, Supplier Device Package: DPAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 300 V.
Інші пропозиції TK8P60W5,RVQ за ціною від 44.45 грн до 113.14 грн
| Фото | Назва | Виробник | Інформація |
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TK8P60W5,RVQ | Виробник : Toshiba |
MOSFETs Power MOSFET N-Channel |
на замовлення 1709 шт: термін постачання 21-30 дні (днів) |
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TK8P60W5,RVQ | Виробник : Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 600V 8A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 300 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: DPAK Vgs(th) (Max) @ Id: 4.5V @ 400µA Power Dissipation (Max): 80W (Tc) Rds On (Max) @ Id, Vgs: 560mOhm @ 4A, 10V Current - Continuous Drain (Id) @ 25°C: 8A (Ta) |
на замовлення 2855 шт: термін постачання 21-31 дні (днів) |
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