TK8P65W,RQ Toshiba Semiconductor and Storage

Description: PB-F POWER MOSFET TRANSISTOR DPA, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7.8A (Ta), Rds On (Max) @ Id, Vgs: 670mOhm @ 3.9A, 10V, Power Dissipation (Max): 80W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 300µA, Supplier Device Package: DPAK, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 300 V.