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Технічний опис TK8Q65W,S1Q Toshiba
Description: MOSFET N-CH 650V 7.8A IPAK, Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 300 V, Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: I-PAK, Vgs(th) (Max) @ Id: 3.5V @ 300µA, Power Dissipation (Max): 80W (Tc), Rds On (Max) @ Id, Vgs: 670mOhm @ 3.9A, 10V, Current - Continuous Drain (Id) @ 25°C: 7.8A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-251-3 Stub Leads, IPak, Packaging: Tube.
Інші пропозиції TK8Q65W,S1Q за ціною від 132.39 грн до 132.39 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||
|---|---|---|---|---|---|---|---|
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TK8Q65W,S1Q | Toshiba Semiconductor and Storage |
 Description: MOSFET N-CH 650V 7.8A IPAKInput Capacitance (Ciss) (Max) @ Vds: 570 pF @ 300 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: I-PAK Vgs(th) (Max) @ Id: 3.5V @ 300µA Power Dissipation (Max): 80W (Tc) Rds On (Max) @ Id, Vgs: 670mOhm @ 3.9A, 10V Current - Continuous Drain (Id) @ 25°C: 7.8A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-251-3 Stub Leads, IPak Packaging: Tube |
на замовлення 5 шт: термін постачання 21-31 дні (днів) |
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| TK8Q65W,S1Q |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 650V 7.8A IPAK
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: I-PAK
Vgs(th) (Max) @ Id: 3.5V @ 300µA
Power Dissipation (Max): 80W (Tc)
Rds On (Max) @ Id, Vgs: 670mOhm @ 3.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.8A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Stub Leads, IPak
Packaging: Tube
Description: MOSFET N-CH 650V 7.8A IPAK
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: I-PAK
Vgs(th) (Max) @ Id: 3.5V @ 300µA
Power Dissipation (Max): 80W (Tc)
Rds On (Max) @ Id, Vgs: 670mOhm @ 3.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.8A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Stub Leads, IPak
Packaging: Tube
на замовлення 5 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 132.39 грн |