TN2404K-T1-E3 Vishay Siliconix
Виробник: Vishay Siliconix
Description: MOSFET N-CH 240V 200MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 4Ohm @ 300mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 240 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 23.46 грн |
| 6000+ | 20.93 грн |
| 9000+ | 20.08 грн |
| 15000+ | 17.95 грн |
| 21000+ | 17.42 грн |
| 30000+ | 17.15 грн |
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Технічний опис TN2404K-T1-E3 Vishay Siliconix
Description: MOSFET N-CH 240V 200MA SOT23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 200mA (Ta), Rds On (Max) @ Id, Vgs: 4Ohm @ 300mA, 10V, Power Dissipation (Max): 360mW (Ta), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: SOT-23-3 (TO-236), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 240 V, Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V.
Інші пропозиції TN2404K-T1-E3 за ціною від 19.40 грн до 91.64 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||
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TN2404K-T1-E3 | Vishay Semiconductors |
MOSFETs 240V 0.2A 4.0Ohm |
на замовлення 61711 шт: термін постачання 21-30 дні (днів) |
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TN2404K-T1-E3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 240V; 0.16A; 0.23W Kind of channel: enhancement Mounting: SMD Case: SOT23 Type of transistor: N-MOSFET Kind of package: reel; tape Technology: TrenchFET® Polarisation: unipolar Gate charge: 4.87nC Drain current: 0.16A Power dissipation: 0.23W On-state resistance: 4Ω Gate-source voltage: ±20V Drain-source voltage: 240V |
на замовлення 672 шт: термін постачання 14-30 дні (днів) |
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TN2404K-T1-E3 | Vishay Siliconix |
Description: MOSFET N-CH 240V 200MA SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Rds On (Max) @ Id, Vgs: 4Ohm @ 300mA, 10V Power Dissipation (Max): 360mW (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 240 V Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V |
на замовлення 33162 шт: термін постачання 21-31 дні (днів) |
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| TN2404K-T1-E3 |
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Виробник: Vishay Semiconductors
MOSFETs 240V 0.2A 4.0Ohm
MOSFETs 240V 0.2A 4.0Ohm
на замовлення 61711 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 32.47 грн |
| 100+ | 27.13 грн |
| 500+ | 24.85 грн |
| 1000+ | 22.64 грн |
| 3000+ | 19.74 грн |
| 6000+ | 19.40 грн |
| TN2404K-T1-E3 |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 240V; 0.16A; 0.23W
Kind of channel: enhancement
Mounting: SMD
Case: SOT23
Type of transistor: N-MOSFET
Kind of package: reel; tape
Technology: TrenchFET®
Polarisation: unipolar
Gate charge: 4.87nC
Drain current: 0.16A
Power dissipation: 0.23W
On-state resistance: 4Ω
Gate-source voltage: ±20V
Drain-source voltage: 240V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 240V; 0.16A; 0.23W
Kind of channel: enhancement
Mounting: SMD
Case: SOT23
Type of transistor: N-MOSFET
Kind of package: reel; tape
Technology: TrenchFET®
Polarisation: unipolar
Gate charge: 4.87nC
Drain current: 0.16A
Power dissipation: 0.23W
On-state resistance: 4Ω
Gate-source voltage: ±20V
Drain-source voltage: 240V
на замовлення 672 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 88.59 грн |
| 10+ | 51.44 грн |
| 100+ | 33.90 грн |
| 250+ | 31.99 грн |
| TN2404K-T1-E3 |
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Виробник: Vishay Siliconix
Description: MOSFET N-CH 240V 200MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 4Ohm @ 300mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 240 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Description: MOSFET N-CH 240V 200MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 4Ohm @ 300mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 240 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
на замовлення 33162 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 91.64 грн |
| 10+ | 55.34 грн |
| 100+ | 36.56 грн |
| 500+ | 26.74 грн |
| 1000+ | 24.30 грн |