TPC8115(TE12L,Q,M) Toshiba Semiconductor and Storage

Description: MOSFET P-CH 20V 10A 8SOP, Rds On (Max) @ Id, Vgs: 10mOhm @ 5A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 10A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.173", 4.40mm Width), Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 9130 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±8V, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Part Status: Obsolete, Supplier Device Package: 8-SOP (5.5x6.0), Vgs(th) (Max) @ Id: 1.2V @ 200µA, Power Dissipation (Max): 1W (Ta).