TPC8129,LQ(S Toshiba Semiconductor and Storage
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 30V 9A 8SOP
Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): +20V, -25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2V @ 200µA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 22mOhm @ 4.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
| Кількість | Ціна |
|---|---|
| 2500+ | 15.94 грн |
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Технічний опис TPC8129,LQ(S Toshiba Semiconductor and Storage
Description: MOSFET P-CH 30V 9A 8SOP, Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): +20V, -25V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: 8-SOP, Vgs(th) (Max) @ Id: 2V @ 200µA, Power Dissipation (Max): 1W (Ta), Rds On (Max) @ Id, Vgs: 22mOhm @ 4.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 9A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR).
Інші пропозиції TPC8129,LQ(S за ціною від 12.87 грн до 67.03 грн
| Фото | Назва | Виробник | Інформація |
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TPC8129,LQ(S | Виробник : Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 30V 9A 8SOP Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): +20V, -25V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-SOP Vgs(th) (Max) @ Id: 2V @ 200µA Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 22mOhm @ 4.5A, 10V Current - Continuous Drain (Id) @ 25°C: 9A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) |
на замовлення 3215 шт: термін постачання 21-31 дні (днів) |
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TPC8129,LQ(S | Виробник : Toshiba |
MOSFETs N-Ch -30V FET 1650pF -9A 1.9W |
на замовлення 3694 шт: термін постачання 21-30 дні (днів) |
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