TPC8212-H(TE12LQ,M Toshiba Semiconductor and Storage

Description: MOSFET 2N-CH 30V 6A 8SOP, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.173", 4.40mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 450mW, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 6A, Input Capacitance (Ciss) (Max) @ Vds: 840pF @ 10V, Rds On (Max) @ Id, Vgs: 21mOhm @ 3A, 10V, Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2.3V @ 1mA, Supplier Device Package: 8-SOP (5.5x6.0).