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Технічний опис TPC8227-H,LQ Toshiba
Description: MOSFET 2N-CH 40V 5.1A 8SOP, Packaging: Bulk, Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), Power - Max: 1.5W (Ta), Drain to Source Voltage (Vdss): 40V, Current - Continuous Drain (Id) @ 25°C: 5.1A, Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 10V, Rds On (Max) @ Id, Vgs: 33mOhm @ 2.6A, 10V, Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V, Vgs(th) (Max) @ Id: 2.3V @ 100µA, Supplier Device Package: 8-SOP.
Інші пропозиції TPC8227-H,LQ
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
 |
TPC8227-H,LQ | Toshiba Semiconductor and Storage |
 Description: MOSFET 2N-CH 40V 5.1A 8SOPPackaging: Bulk Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) Power - Max: 1.5W (Ta) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 5.1A Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 10V Rds On (Max) @ Id, Vgs: 33mOhm @ 2.6A, 10V Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V Vgs(th) (Max) @ Id: 2.3V @ 100µA Supplier Device Package: 8-SOP |
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| TPC8227-H,LQ |
|
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 40V 5.1A 8SOP
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W (Ta)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 5.1A
Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 10V
Rds On (Max) @ Id, Vgs: 33mOhm @ 2.6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
Vgs(th) (Max) @ Id: 2.3V @ 100µA
Supplier Device Package: 8-SOP
Description: MOSFET 2N-CH 40V 5.1A 8SOP
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W (Ta)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 5.1A
Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 10V
Rds On (Max) @ Id, Vgs: 33mOhm @ 2.6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
Vgs(th) (Max) @ Id: 2.3V @ 100µA
Supplier Device Package: 8-SOP
товару немає в наявності
В кошику
од. на суму грн.